| PART |
Description |
Maker |
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| EDI8F32256C |
HIGH SPEED EIGHT MEGABIT SRAM MODULE
|
ETC[ETC]
|
| EDI8M11024C |
HIGH SPEED MEGABIT SRAM MODULE
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| EDI8M8257C120P6C EDI8M8257C55C6B EDI8M8257CLP150C6 |
HIGH SPEED TWO MEGABIT SRAM MODULE
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| EDI8F4258C |
HIGH SPEED MEGABIT SRAM MODULE
|
ETC[ETC]
|
| ACT-S128K32V ACT-S128K32V-017F2Q ACT-S128K32V-017P |
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module 行为S128K32V高.3Volt 4兆位SRAM的多芯片模块
ACT-S128K32V High Speed 3.3Volt 4 Megabit SRAM Multichip Module 行为S128K32V高3.3Volt 4兆位SRAM的多芯片模块
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
|
| HM621664HB HM621664HBJP-20 |
1M High Speed SRAM
1 M High Speed SRAM (64-kword ×16-bit)(1 M 高SRAM (64k×16)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit)
4M High Speed SRAM (512-kword ?8-bit)
4M High Speed SRAM (512-kword ?8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
ATMEL Corporation
|
